Scientists from the University of Tokyo and Japan's RIKEN research institute have achieved a major breakthrough in creating next-generation memory devices. Researchers managed to change the magnetic state of the Mn3Sn (manganese-tin) antiferromagnetic material using an electrical pulse lasting just 40 picoseconds. This is approximately 250 times faster than the 10-nanosecond access speed of current DRAM memory. This was reported by Ixbt.com reports .
Currently, attempts to increase CPU and GPU performance lead to overheating and a sharp increase in energy consumption. The "spin-orbit torque" principle used in the new development allows for changing the material's magnetic state very quickly with minimal heat generation. This technology could form the basis for energy-efficient and ultra-fast computing systems in the future.
Scientists also demonstrated that the data writing process can be performed not only by electric current but also by ultra-short light pulses. A laser and a photoelectric converter were used for this purpose. This approach is a promising direction for future computing systems where optics and electronics work together.
The authors believe that this technology is expected to revolutionize fields where minimal latency and reduced heat generation are required for data processing. This discovery could usher in a new era in increasing energy efficiency and developing high-speed memory devices.
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